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ultra low quiescent current cmos ldo ap2138/2139 data sheet 1 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited figure 1. package types of ap2138/2139 sot-23-3 general description the ap2138/2139 series ar e cmos-based positive voltage regulator ics. each of these ics consists of a voltage reference, an error amplifier, a resistor network for setting output voltage and a current limit circuit for current protection. the difference between ap 2138 and ap2139 is the ap2139 has an enable circuit with a quick discharge function. these ics feature high output voltage accuracy, extremely low quiescent current and low dropout volt- age which make them ideal for use in various power sources for portable applications. the ap2138/2139 series have 1.2v, 1.4v, 1.5v, 1.8v, 2.5v, 2.8v, 3.0v, 3.3v, 3.6v and 4.0v fixed output voltage versions. the ap2138 series is available in sot-23-3 and sot- 89 packages, ap2139 series is available in sot-23-5 package. features ultra-low quiescent current: 1.0 a typical output voltages: 1.2v, 1.4v, 1.5v, 1.8v, 2.5v, 2.8v, 3.0v, 3.3v, 3.6v and 4.0v high output voltage accuracy: 2% output current: 250ma low dropout voltage: 25mv typical at i out =10ma and v out =3v 200mv typical at i out =100ma and v out =3v line regulation: 6mv typical load regulation: 25mv typical low output voltage temperature coefficient: 100ppm/ o c low standby current: 0.1 a typical (ap2139) active quick output discharge (ap2139) logic-controlled enable (ap2139) applications battery powered equipment reference voltage sources cameras, video cameras portable av systems mobile phones communication tools portable games sot-23-5 sot-89
ultra low quiescent current cmos ldo ap2138/2139 data sheet 2 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited figure 2. pin configuration of ap2138/2139 (top view) pin configuration (sot-23-3) n package v in gnd v out (sot-23-5) k package nc gnd ce v out v in pin description pin number pin name function sot-23-3 sot-89 (r) sot-89 (ra) sot-23-5 1 1 2 2 gnd ground 23 1 5v out regulated output voltage 32 3 1v in input voltage 3 ce active high enable input. logic high=enable, logic low=shutdown 4 nc no connection 1 2 3 gnd v out v in 3 2 1 1 2 34 5 (sot-89) r package 1 2 3 gnd v out v in (sot-89) ra package
ultra low quiescent current cmos ldo ap2138/2139 data sheet 3 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited vref current limit vref current limit functional block diagram figure 3. functional block diagram of ap2138/2139 v in 3 (2)[3] v out gnd 1 (1)[2] 2 (3)[1] v in gnd v out 5 1 2 ce 3 ap2138 ap2139 a: sot-23-3 b: sot-89 (r) a(b)[c] c: sot-89 (ra)
ultra low quiescent current cmos ldo ap2138/2139 data sheet 4 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited package temperature range condition part nu mber marking id packing type sot-23-3 -40 to 85 o c ap2138n-1.2trg1 ga3 tape & reel 1.4v ap2138n-1.4trg1 gg1 tape & reel 1.5v ap2138n-1.5trg1 gg2 tape & reel 1.8v ap2138n-1.8trg1 gg4 tape & reel 2.5v ap2138n-2.5trg1 gg5 tape & reel 2.8v ap2138n-2.8trg1 gg6 tape & reel 3.0v ap2138n-3.0trg1 gg3 tape & reel 3.3v ap2138n-3.3trg1 gg7 tape & reel 3.6v ap2138n-3.6trg1 gg8 tape & reel 4.0v ap2138n-4.0trg1 ge9 tape & reel sot-89 -40 to 85 o c 1.2v(r) ap2138r-1.2trg1 g42c tape & reel 1.4v (r) ap2138r-1.4trg1 g42d tape & reel 1.5v (r) ap2138r-1.5trg1 g42e tape & reel 1.8v (r) ap2138r-1.8trg1 g42f tape & reel 2.5v (r) ap2138r-2.5trg1 g42g tape & reel 2.8v (r) ap2138r-2.8trg1 g42h tape & reel 3.0v (r) ap2138r-3.0trg1 g42j tape & reel 3.3v (r) ap2138r-3.3trg1 g42k tape & reel circuit type package n: sot-23-3 g1: green ap213x - tr: tape and reel ordering information 1.2v 1.4: fixed output 1.4v 1.5: fixed output 1.5v 2.8: fixed output 2.8v 8: ap2138 9: ap2139 k: sot-23-5 a: active high with built-in resistor blank: no enable function 3.0: fixed output 3.0v 3.3: fixed output 3.3v 1.8: fixed output 1.8v 2.5: fixed output 2.5v 1.2: fixed output 1.2v r/ra: sot-89 3.6: fixed output 3.6v 4.0: fixed output 4.0v
5 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited data sheet ultra low quiescent current cmos ldo ap2138/2139 ordering information (continued) package temperature range condi tion part number marking id packing type sot-89 -40 to 85 o c 1.2v (ra) ap2138ra-1.2trg1 g13l tape & reel 1.4v (ra) ap2138ra-1.4trg1 g13m tape & reel 1.5v (ra) ap2138ra-1.5trg1 g13n tape & reel 1.8v (ra) ap2138ra-1.8trg1 g13o tape & reel 2.5v (ra) ap2138ra-2.5trg1 g13p tape & reel 2.8v (ra) ap2138ra-2.8trg1 g33j tape & reel 3.0v (ra) ap2138ra-3.0trg1 g37j tape & reel 3.3v (ra) ap2138ra-3.3trg1 g41j tape & reel sot-23-5 -40 to 85 o c active high with built-in resistor ap2139ak-1.2trg1 g7r tape & reel active high with built-in resist or ap2139ak-1.4trg1 g6l tape & reel active high with built-in resist or ap2139ak-1.5trg1 g6m tape & reel active high with built-in resist or ap2139ak-1.8trg1 g6n tape & reel active high with built-in resist or ap2139ak-2.5trg1 g6p tape & reel active high with built-in resist or ap2139ak-2.8trg1 g6q tape & reel active high with built-in resist or ap2139ak-3.0trg1 g6j tape & reel active high with built-in resist or ap2139ak-3.3trg1 g6r tape & reel bcd semiconductor's products, as designa ted with "g1" suffix in the part number, are rohs compliant and green.
ultra low quiescent current cmos ldo ap2138/2139 data sheet 6 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited parameter symbol value unit input voltage v in 7.0 v enable input voltage (ap2139) v ce -0.3 to v in +0.3 v lead temperature t lead 260 o c junction temperature t j 150 o c storage temperature range t stg -65 to 150 o c esd (machine model) esd 350 v esd (human body model) esd 2000 v thermal resistance (note 2) ja sot-23-3 250 o c/w sot-23-5 250 sot-89 165 note 1: stresses greater than those li sted under "absolute maximu m ratings" may cause permanen t damage to the device. these are stress ratings only, and functiona l operation of the device at these or any other conditions beyond those indicated under "recommended operating conditions" is not implied. exposure to "absolut e maximum ratings" for extended periods may affect device reliability. note 2: absolute maximum rati ngs indicate limits beyond which damage to the component may occur. electrical specifica- tions do not apply when operating the device outside of its operating ra tings. the maximum allowabl e power dissipation is a function of the maximum junction temperature, t j(max), the junction-to-ambient thermal resistance, ja, and the ambient tem- perature, t a. the maximum allowable power diss ipation at any ambient temperat ure is calculated using: p d(max) =(t j(max) - t a )/ ja. exceeding the maximum allowable power dissipation will result in excessive die temperature. absolute maximum ratings (note 1) parameter symbol min max unit input voltage v in 2.5 6.6 v operating ambient temperature range t a -40 85 o c recommended operating conditions
7 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited data sheet ultra low quiescent current cmos ldo ap2138/2139 parameter symbol conditions min typ max unit input voltage v in 6.6 v output voltage v out 1.176 1.200 1.224 v quiescent current i q i out =0 1.0 1.5 a standby current (ap2139) i std v ce =0 0.1 1 a output current i out 250 ma load regulation v rload 1ma i out 100ma 25 40 mv line regulation v rline 2.2v v in 6v 618 mv dropout voltage v drop i out =10ma 100 300 mv i out =30ma 400 700 i out =100ma 700 1000 i out =250ma 1000 1300 output voltage temperature coefficient v out / t 140 v/ o c ( v out /v out )/ t 100 ppm/ o c short circuit current i short v out =0 50 ma ce pull-down constant current (ap2139) i pd 0.2 a ce input logic-high voltage (ap2139) v ih 1.2 v ce input logic-low voltage (ap2139) v il 0.3 v thermal resistance jc sot-23-3 81.9 o c/w sot-23-5 81.9 sot-89 51.1 (v in =2.5v, v ce =2.5v (ap2139),t j =25 o c, i out =40ma, c in =c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) ap2138/2139-1.2 electri cal characteristics electrical characteristics
ultra low quiescent current cmos ldo ap2138/2139 data sheet 8 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit input voltage v in 6.6 v output voltage v out 1.372 1.400 1.428 v quiescent current i q i out =0 1.0 1.5 a standby current (ap2139) i std v ce =0 0.1 1 a output current i out 250 ma load regulation v rload 1ma i out 100ma 25 40 mv line regulation v rline 2.4v v in 6v 618 mv dropout voltage v drop i out =10ma 100 300 mv i out =30ma 400 700 i out =100ma 600 900 i out =250ma 1000 1300 output voltage temperature coefficient v out / t 140 v/ o c ( v out /v out )/ t 100 ppm/ o c short circuit current i short v out =0 50 ma ce pull-down constant current (ap2139) i pd 0.2 a ce input logic-high voltage (ap2139) v ih 1.2 v ce input logic-low voltage (ap2139) v il 0.3 v thermal resistance jc sot-23-3 81.9 o c/w sot-23-5 81.9 sot-89 51.1 (v in =2.5v, v ce =2.5v (ap2139),t j =25 o c, i out =40ma, c in =c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) electrical characteristics(continued) ap2138/2139-1.4 electri cal characteristics
9 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited data sheet ultra low quiescent current cmos ldo ap2138/2139 parameter symbol conditions min typ max unit input voltage v in 6.6 v output voltage v out 1.470 1.500 1.530 v quiescent current i q i out =0 1.0 1.5 a standby current (ap2139) i std v ce =0 0.1 1 a output current i out 250 ma load regulation v rload 1ma i out 100ma 25 40 mv line regulation v rline 2.5v v in 6v 618 mv dropout voltage v drop i out =10ma 100 300 mv i out =30ma 200 400 i out =100ma 600 900 i out =250ma 1000 1300 output voltage temperature coefficient v out / t 150 v/ o c ( v out /v out )/ t 100 ppm/ o c short circuit current i short v out =0 50 ma ce pull-down constant current (ap2139) i pd 0.2 a ce input logic-high voltage (ap2139) v ih 1.2 v ce input logic-low voltage (ap2139) v il 0.3 v thermal resistance jc sot-23-3 81.9 o c/w sot-23-5 81.9 sot-89 51.1 electrical characteristics (continued) ap2138/2139-1.5 electri cal characteristics (v in =2.5v, v ce =2.5v (ap2139),t j =25 o c, i out =40ma, c in =c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
ultra low quiescent current cmos ldo ap2138/2139 data sheet 10 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit input voltage v in 6.6 v output voltage v out 1.764 1.800 1.836 v quiescent current i q i out =0 1.0 1.5 a standby current (ap2139) i std v ce =0 0.1 1 a output current i out 250 ma load regulation v rload 1ma i out 100ma 25 40 mv line regulation v rline 2.8v v in 6v 618 mv dropout voltage v drop i out =10ma 25 100 mv i out =30ma 120 250 i out =100ma 400 700 i out =250ma 850 1100 output voltage temperature coefficient v out / t 180 v/ o c ( v out /v out )/ t 100 ppm/ o c short circuit current i short v out =0 50 ma ce pull-down constant current (ap2139) i pd 0.2 a ce input logic-high voltage (ap2139) v ih 1.2 v ce input logic-low voltage (ap2139) v il 0.3 v thermal resistance jc sot-23-3 81.9 o c/w sot-23-5 81.9 sot-89 51.1 electrical characteristics (continued) ap2138/2139-1.8 electri cal characteristics (v in =2.8v, v ce =2.8v (ap2139),t j =25 o c, i out =40ma, c in =c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
11 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited data sheet ultra low quiescent current cmos ldo ap2138/2139 parameter symbol conditions min typ max unit input voltage v in 6.6 v output voltage v out 2.450 2.500 2.550 v quiescent current i q i out =0 1.0 1.5 a standby current (ap2139) i std v ce =0 0.1 1 a output current i out 250 ma load regulation v rload 1ma i out 100ma 25 40 mv line regulation v rline 3.5v v in 6v 618 mv dropout voltage v drop i out =10ma 25 100 mv i out =30ma 100 250 i out =100ma 250 500 i out =250ma 650 1000 output voltage temperature coefficient v out / t 250 v/ o c ( v out /v out )/ t 100 ppm/ o c short circuit current i short v out =0 50 ma ce pull-down constant current (ap2139) i pd 0.2 a ce input logic-high voltage (ap2139) v ih 1.2 v ce input logic-low voltage (ap2139) v il 0.3 v thermal resistance jc sot-23-3 81.9 o c/w sot-23-5 81.9 sot-89 51.1 electrical characteristics (continued) ap2138/2139-2.5 electri cal characteristics (v in =3.5v, v ce =3.5v (ap2139), t j =25 o c, i out =40ma, c in =c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.)
ultra low quiescent current cmos ldo ap2138/2139 data sheet 12 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited parameter symbol conditions min typ max unit input voltage v in 6.6 v output voltage v out 2.744 2.800 2.856 v quiescent current i q i out =0 1.0 1.5 a standby current (ap2139) i std v ce =0 0.1 1 a output current i out 250 ma load regulation v rload 1ma i out 100ma 25 40 mv line regulation v rline 3.8v v in 6v 618 mv dropout voltage v drop i out =10ma 25 100 mv i out =30ma 70 200 i out =100ma 250 500 i out =250ma 500 800 output voltage temperature coefficient v out / t 280 v/ o c ( v out /v out )/ t 100 ppm/ o c short circuit current i short v out =0 50 ma ce pull-down constant current (ap2139) i pd 0.2 a ce input logic-high voltage (ap2139) v ih 1.2 v ce input logic-low voltage (ap2139) v il 0.3 v thermal resistance jc sot-23-3 81.9 o c/w sot-23-5 81.9 sot-89 51.1 (v in =3.8v, v ce =3.8v (ap2139), t j =25 o c, i out =40ma, c in =c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) electrical characteristics (continued) ap2138/2139-2.8 electri cal characteristics
13 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited data sheet ultra low quiescent current cmos ldo ap2138/2139 parameter symbol conditions min typ max unit input voltage v in 6.6 v output voltage v out 2.940 3.000 3.060 v quiescent current i q i out =0 1.0 1.5 a standby current (ap2139) i std v ce =0 0.1 1 a output current i out 250 ma load regulation v rload 1ma i out 100ma 25 40 mv line regulation v rline 4v v in 6v 618 mv dropout voltage v drop i out =10ma 25 100 mv i out =30ma 70 200 i out =100ma 200 400 i out =250ma 450 700 output voltage temperature coefficient v out / t 300 v/ o c ( v out /v out )/ t 100 ppm/ o c short circuit current i short v out =0 50 ma ce pull-down constant current (ap2139) i pd 0.2 a ce input logic-high voltage (ap2139) v ih 1.2 v ce input logic-low voltage (ap2139) v il 0.3 v thermal resistance jc sot-23-3 81.9 o c/w sot-23-5 81.9 sot-89 51.1 (v in =4v, v ce =4v (ap2139), t j =25 o c, i out =40ma, c in =c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless oth- erwise specified.) ap2138/2139-3.0 electri cal characteristics electrical characteristics (continued)
ultra low quiescent current cmos ldo ap2138/2139 data sheet 14 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited (v in =4.3v, v ce =4.3v (ap2139),t j =25 o c, i out =40ma, c in =c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwise specified.) parameter symbol conditions min typ max unit input voltage v in 6.6 v output voltage v out 3.234 3.300 3.366 v quiescent current i q i out =0 1.0 1.5 a standby current (ap2139) i std v ce =0 0.1 1 a output current i out 250 ma load regulation v rload 1ma i out 100ma 25 40 mv line regulation v rline 4.3v v in 6v 618 mv dropout voltage v drop i out =10ma 20 100 mv i out =30ma 50 200 i out =100ma 160 300 i out =250ma 400 600 output voltage temperature coefficient v out / t 330 v/ o c ( v out /v out )/ t 100 ppm/ o c short circuit current i short v out =0 50 ma ce pull-down constant current (ap2139) i pd 0.2 a ce input logic-high voltage (ap2139) v ih 1.2 v ce input logic-low voltage (ap2139) v il 0.3 v thermal resistance jc sot-23-3 81.9 o c/w sot-23-5 81.9 sot-89 51.1 ap2138/2139-3.3 electri cal characteristics electrical characteristics (continued)
15 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited data sheet ultra low quiescent current cmos ldo ap2138/2139 (v in =4.6v, t j =25 o c, i out =40ma, c in =c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwis e specified.) parameter symbol conditions min typ max unit input voltage v in 6.6 v output voltage v out 3.528 3.600 3.672 v quiescent current i q i out =0 1.0 1.5 a output current i out 250 ma load regulation v rload 1ma i out 100ma 25 40 mv line regulation v rline 4.6v v in 6v 618 mv dropout voltage v drop i out =10ma 20 100 mv i out =30ma 50 200 i out =100ma 160 300 i out =250ma 400 600 output voltage temperature coefficient v out / t 330 v/ o c ( v out /v out )/ t 100 ppm/ o c short circuit current i short v out =0 50 ma thermal resistance jc sot-23-3 81.9 o c/w sot-23-5 81.9 sot-89 51.1 ap2138-3.6 electrical characteristics electrical characteristics (continued)
ultra low quiescent current cmos ldo ap2138/2139 data sheet 16 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited (v in =5.0v, t j =25 o c, i out =40ma, c in =c out =1 f, bold typeface applies over -40 o c t j 85 o c, unless otherwis e specified.) parameter symbol conditions min typ max unit input voltage v in 6.6 v output voltage v out 3.920 4.000 4.080 v quiescent current i q i out =0 1.0 1.5 a output current i out 250 ma load regulation v rload 1ma i out 100ma 25 40 mv line regulation v rline 5v v in 6v 618 mv dropout voltage v drop i out =10ma 20 100 mv i out =30ma 50 200 i out =100ma 160 300 i out =250ma 400 600 output voltage temperature coefficient v out / t 330 v/ o c ( v out /v out )/ t 100 ppm/ o c short circuit current i short v out =0 50 ma thermal resistance jc sot-23-3 81.9 o c/w sot-23-5 81.9 sot-89 51.1 ap2138-4.0 electrical characteristics electrical characteristics (continued)
17 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited data sheet ultra low quiescent current cmos ldo ap2138/2139 typical performance characteristics figure 4. output voltage vs. input voltage figure 5. output voltage vs. junction temperature figure 6. output voltage vs. output current figure 7. quiescent current vs. input voltage -40-20 0 20406080100120 3.20 3.22 3.24 3.26 3.28 3.30 3.32 3.34 3.36 3.38 3.40 ap2138-3.3 output voltage (v) junction temperature( o c) i out =10ma i out =100ma i out =150ma i out =200ma i out =250ma 0 25 50 75 100 125 150 175 200 225 250 3.20 3.22 3.24 3.26 3.28 3.30 3.32 3.34 3.36 3.38 3.40 ap2138-3.3 v in =4.3v t j =25 o c output voltage (v) output current (ma) 012345678 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ap2138-3.3 no load t j =-40 o c t j =25 o c t j =85 o c quiescent current( a) input voltage (v) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ap2138-3.3 no load t j =-40 o c t j =25 o c t j =85 o c output voltage (v) input voltage (v)
ultra low quiescent current cmos ldo ap2138/2139 data sheet 18 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited typical performance ch aracteristics (continued) figure 8. quiescent current vs. junction temperature figure 9. quiescent current vs. output current figure 10. output voltage vs. output current -40 -20 0 20 40 60 80 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 ap2138-3.3 v in =4.3v no load quiescent current ( a) junction temperature( o c) 0 25 50 75 100 125 150 175 200 225 250 0 5 10 15 20 25 30 35 40 45 50 ap2138-3.3 v in =4.3v t j =-40 o c t j =25 o c t j =85 o c quiescent current ( a) output current (ma) 0 50 100 150 200 250 300 350 400 450 500 550 600 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 t j =-40 o c t j =25 o c t j =85 o c ap2138-3.3 v in =4.3v output voltage (v) output current (ma) 0 50 100 150 200 250 300 350 400 450 500 550 600 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 ap2138-3.3 t j =25 o c output voltage (v) output current (ma) v in =3.8v v in =4.3v v in =6v v in =6.5v figure 11. output voltage vs. output current
19 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited data sheet ultra low quiescent current cmos ldo ap2138/2139 typical performance ch aracteristics (continued) figure 12. dropout voltage vs. output current figure 13. dropout voltage vs. junction temperature 0 25 50 75 100 125 150 175 200 225 250 0 50 100 150 200 250 300 350 400 450 500 550 600 ap2138-3.3 dropout voltage (mv) output current (ma) t j =-40 o c t j =25 o c t j =85 o c -40-20 0 20406080 0 50 100 150 200 250 300 350 400 450 500 550 i out =250ma i out =200ma i out =150ma i out =100ma ap2138-3.3 dropout voltage (mv) junction temperature ( o c) i out =10ma figure 14. line transient ( v in =4.3 to 5.3v, i out =10ma ) figure 15. load transient ( v in =4.3v, i out =1ma to 150ma) v in 500mv v out 200mv/div v out 1v/div i out 50ma/div time 100 s/div time 2ms/div
ultra low quiescent current cmos ldo ap2138/2139 data sheet 20 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited figure 16. start-up response figure 17. enable input response time 200 s/div typical performance ch aracteristics (continued) v in 1v/div v out 1v/div v in 1v/div v out 1v/div time 200 s/div
21 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited data sheet ultra low quiescent current cmos ldo ap2138/2139 typical application figure 1 8 . typical application of ap2138/2139 v in ap2138-1.4 c in 1 f c out 1 f v out v in v out gnd v in =2.4v v out =1.4v note: filter capacitors are required at the ap2138/2139's input and output. 1 f capacitor is requir ed at the input. the minimum output capacitance required for stability should be more than 1 f with esr from 0.01 to 100 . ceramic capacitors are recommended. v in ap2139-3.0 c in 1 f c out 1 f v out v in v out gnd ce nc v out =3v v in =4v
ultra low quiescent current cmos ldo ap2138/2139 data sheet 22 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited mechanical dimensions sot-23-3 unit: mm(inch) 2.820(0.111) 3.020(0.119) 2.650(0.104) 2.950(0.116) 0.950(0.037) typ 0.300(0.012) 0.500(0.020) 1.500(0.059) 1.700(0.067) 1.800(0.071) 2.000(0.079) 0.300(0.012) 0.600(0.024) 0.100(0.004) 0.200(0.008) 0.000(0.000) 0.150(0.006) 0.900(0.035) 1.300(0.051) 1.450(0.057) max. 0.200(0.008) 0 8
23 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited data sheet ultra low quiescent current cmos ldo ap2138/2139 mechanical dimens ions (continued) sot-23-5 unit: mm(inch) 2.820(0.111) 2 . 6 5 0 ( 0 . 1 0 4 ) 1 . 5 0 0 ( 0 . 0 5 9 ) 0 . 0 0 0 ( 0 . 0 0 0 ) 0.300(0.012) 0.950(0.037) 0 . 9 0 0 ( 0 . 0 3 5 ) 0.100(0.004) 0.200(0.008) 0 . 3 0 0 ( 0 . 0 1 2 ) 8 0 3.020(0.119) 1 . 7 0 0 ( 0 . 0 6 7 ) 2 . 9 5 0 ( 0 . 1 1 6 ) 0.400(0.016) 0 . 1 5 0 ( 0 . 0 0 6 ) 1 . 3 0 0 ( 0 . 0 5 1 ) 0.200(0.008) 0 . 6 0 0 ( 0 . 0 2 4 ) 1.800(0.071) 2.000(0.079) 0 . 7 0 0 ( 0 . 0 2 8 ) r e f t y p 1 . 4 5 0 ( 0 . 0 5 7 ) m a x
ultra low quiescent current cmos ldo ap2138/2139 data sheet 24 jul. 2012 rev. 2. 3 bcd semiconductor manufacturing limited mechanical dimens ions (continued) sot-89 unit: mm(inch) 45 1.030(0.041)ref 1.550(0.061)ref 4.400(0.173) 4.600(0.181) 0.900(0.035) 1.100(0.043) 3.950(0.156) 4.250(0.167) 3.000(0.118) typ 0.480(0.019) 2.300(0.091) 2.600(0.102) 0.320(0.013) 0.520(0.020) 3 10 2.060(0.081)ref 1.400(0.055) 1.600(0.063) 0.350(0.014) 0.450(0.018) r0.150(0.006) 3 10 1.500(0.059) 0.320(0.013)ref 1.620(0.064)ref 2.210(0.087)ref 0.320(0.013) 0.520(0.020) 1.800(0.071)
important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing co., ltd. 800 yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd., shenzhen office unit a room 1203, skyworth bldg., gaoxin ave.1.s., nanshan district, shenzhen, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corp. 30920 huntwood ave. hayward, ca 94544, usa tel : +1-510-324-2988 fax: +1-510-324-2788 - headquarters bcd semiconductor manufacturing limited no. 1600, zi xing road, shanghai zizhu sc ience-based industrial park, 200241, china tel: +86-21-24162266, fax: +86-21-24162277 bcd semiconductor manufacturing limited important notice bcd semiconductor manufacturing limited reserves the right to make changes without further not ice to any products or specifi- cations herein. bcd semiconductor manufacturing limited does not as sume any responsibility for us e of any its products for any particular purpose, nor does bcd semiconductor manufacturi ng limited assume any liability aris ing out of the application or use of any its products or circui ts. bcd semiconductor manufacturing limited does not convey any license under its patent rights or other rights nor the rights of others. - wafer fab shanghai sim-bcd semiconductor manufacturing limited 800, yi shan road, shanghai 200233, china tel: +86-21-6485 1491, fax: +86-21-5450 0008 bcd semiconductor manufacturing limited main site regional sales office shenzhen office shanghai sim-bcd semiconductor manuf acturing co., ltd. shenzhen office advanced analog circuits (shanghai) corporation shenzhen office room e, 5f, noble center, no.1006, 3rd fuzhong road, futian district, shenzhen 518026, china tel: +86-755-8826 7951 fax: +86-755-8826 7865 taiwan office bcd semiconductor (taiwan) company limited 4f, 298-1, rui guang road, nei-hu district, taipei, taiwan tel: +886-2-2656 2808 fax: +886-2-2656 2806 usa office bcd semiconductor corporation 30920 huntwood ave. hayward, ca 94544, u.s.a tel : +1-510-324-2988 fax: +1-510-324-2788 - ic design group advanced analog circuits (shanghai) corporation 8f, zone b, 900, yi shan road, shanghai 200233, china tel: +86-21-6495 9539, fax: +86-21-6485 9673 bcd semiconductor manufacturing limited http://www.bcdsemi.com bcd semiconductor manufacturing limited

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